Foundation for Research and Technology-Hellas Greece


FORTH has more 20 years of expertise in materials deposition (amorphous, polycrystalline & crystalline) and processing know-how for the fabrication and characterization of sensors, electronic and optoelectronic devices. FORTH has become one of the world's leading Institutions for ultra sensitive metal oxide sensors and provides scientific and technical advice, expertise or services for Universities and Companies. FORTH has been participating in or leading numerous national or EU-funded research programs.
List of five recent publications related to the project

  1. G. Kiriakidis et al. “The effect of Au nanoclusters in tin OxIDe film gas sensors” Mousdis, G.A., Kompitsas, M., Fasaki, I., Suchea, M., NATO Science for Peace and Security Series B: Physics and Biophysics 2009, Pages 219-222
  2. G. Kiriakidis et al. “On the road to inexpensive, sub-ppb, room temperature ozone detectors”Sensor Letters 6 (2008), 812-816
  3. G. Kiriakidis et al "Highly sensitive InOx Ozone Sensing Films on Flexible Substrates", Journal of Sensors, V 2009, DOI: 10.1155/2009/727893
  4. G. Kiriakidis et al "Nano-structural and surface characteristics of non-stoichiometric In2O3-x thin films, ", International Journal of Nanotechnology 6 (2009) 208 - 218
  5. E. Aperathitis et al "Nanocrystalline ZnO Thin Film For Gas Sensor Application", Journal of Ovonic Research Vol.5, No.1,( 2009), p.15-20.

The Institute of Electronic Structure and Laser (IESL) was established in 1983 and focuses its research on fundamental and applied issues related to materials science and technology and laser interactions with matter. A prime activity in the Materials and Devices field covers research, primarily on compound semiconductors (III-Vs, III-Nitrides and SiC) and carbon electronics and secondary on Transparent Metal Oxides with assorted infrastructure on material growth (three MBE systems in a class 1000 clean room, two sputtering systems) processing (class 1000 clean-room) and material and device characterization. The microphysical characterization technologies for structural, electrical, optical and mechanical characterization of materials and devices include: XRD, TEM/SEM/STM, AFM, ellipsometry, PL, Hall, conductometric and SAW test beds, UV-VIS-FTIR, micro-hardness, etc.
FORTH has been involved in numerous European projects concerning material and device fabrication. International co-operations through EU projects (TMR, RTD, STREP, IP and NoE's), in NMP, mobility and ICT projects either as coordinator or key partners. Also IESL/FORTH receives significant funding from funding sources such as NATO and ENIAC. FORTH is board member in the National micro&nano-network (Coordinator of Greek research institutes and industry) and organizer and host of the bi-annual International Symposia series on Transparent Conductive Materials (Oxides) (TCO2006,2008, TCM2010) The excellence of IESL/FORTH is highlighted by events like the candidacy for the 2002 Descartes prize for its work on RF MEMS or references to its work in international journals like Compound Semiconductor (July 2002, March 2003). In 2005 FORTH was among the winners of the Descartes prize for its work on left-handed materials.